конденсатор SMD C1206-Y5V-50v-1800 pF-10% (CL31F182KBNC) (2000г.)
|
(Samsung)
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2860
|
0,11
|
27.03.2024 14:27:48
|
|
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1206 6800ПФ X7R 50В 10% CL31B682KBCNNNC
|
Samsung
|
3490
|
0,12
|
12.01.2024 12:12:29
|
|
|
1206 1800ПФ X7R 50В 10% 1206B182K500NT
|
Fenghua
|
1980
|
0,12
|
12.01.2024 12:12:29
|
|
|
1206 6800ПФ X7R 100В 10% 1206B682K101
|
PDC
|
3800
|
0,12
|
12.01.2024 12:12:29
|
|
|
1206 1800пф X7R 50в 10% 1206B182K500NT
|
Fenghua
|
1980
|
0,10
|
04.10.2023 12:31:31
|
|
|
1206 6800пф X7R 100в 10% 1206B682K101
|
PDC
|
3800
|
0,10
|
04.10.2023 12:31:31
|
|
|
1206 6800пф X7R 50в 10% CL31B682KBCNNNC
|
Samsung
|
3490
|
0,10
|
04.10.2023 12:31:31
|
|
|
RC1206FR-0782KL-1206-82 КОМ-1% ЧИП резистор
|
|
3548
|
0,20
|
19.09.2023 11:01:19
|
|
|
1206 1800ПФ X7R 50В 10% 1206B182K500NT
|
|
1485
|
0,21
|
29.03.2023 13:03:00
|
|
|
1206 1800ПФ X7R 50В 10% CL31B182KBNC
|
|
2550
|
0,21
|
29.03.2023 13:03:00
|
|
|
1206 6800ПФ X7R 100В 10% 1206B682K101
|
|
2925
|
0,21
|
29.03.2023 13:03:00
|
|
|
1206 6800ПФ X7R 50В 10% CL31B682KBCNNNC
|
|
2618
|
0,21
|
29.03.2023 13:03:00
|
|
|
1206 6800ПФ X7R 50В 10% CL31B682KBCNNNC
|
|
1950
|
0,21
|
29.03.2023 13:03:00
|
|
|
LQH31MNR82K03L чип индуктивность, 0.82мкГн, 10%, 1206
|
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06.10.2021 15:13:12
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1206 82K 1%
|
|
|
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06.10.2021 15:13:12
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1206 82K 5%
|
YAGEO
|
|
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06.10.2021 15:12:26
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1206 82K 5%
|
KOME
|
|
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06.10.2021 15:12:26
|
|
|
1206 82K 1%
|
YAGEO
|
|
|
06.10.2021 15:12:26
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1206 82K 5% (0603х4)
|
KOME
|
|
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06.10.2021 15:12:26
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SMD-резистор 1206 82 kom ±5% (1/4W) RO
|
5000 ROYALOHM
|
35000
|
0,01
|
29.09.2021 16:37:26
|
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